MOSFETs & FET Circuits

a power MOSFET

A power MOSFET is a MOSFET built to switch serious current, from amps to hundreds of amps, and to block tens or hundreds of volts. Unlike the tiny lateral transistors inside a logic chip, a power MOSFET is built vertically: current flows down through the silicon from a top source to a bottom drain (usually the metal tab), so a large area carries the current with a very low on-resistance. It is the modern muscle behind motor drives, power supplies, battery management, and LED drivers.

Its appeal over a power BJT is voltage control: you command it with gate voltage, not a continuous base current, and many such switches can be paralleled and driven simply. The key datasheet numbers are the drain-source voltage rating (how much it blocks when off), the continuous drain current, R_DS(on) (the conduction loss), and the gate charge (how hard it is to switch fast). Real power-switching design is the art of balancing low on-resistance against low gate charge, since pushing one usually worsens the other.

The practical cautions are real. A power MOSFET can dump a lot of heat, so it lives on a heat sink and you must respect its safe operating area. Its gate, though it draws no steady current, is a sizeable capacitor that needs a stiff gate driver to switch quickly, and it still carries that fragile, ESD-sensitive oxide. Treat the body diode as present but slow, and never assume the headline current rating is usable without adequate cooling.

A power MOSFET rated 60 V, 50 A, 8 milliohms switches a 12 V motor: at 20 A its conduction loss is 20^2 times 0.008 = 3.2 W, manageable on a small heat sink with a stiff gate driver.

A voltage-controlled muscle switch with a heat budget.

The headline current rating usually assumes an unrealistic case temperature. The real limit is set by your cooling and total (conduction plus switching) loss, not the datasheet maximum.

Also called
功率 MOSFET功率場效電晶體