Power electronics

IGBT

A hybrid power switch that marries a MOSFET's easy voltage-driven gate to a bipolar transistor's beefy current-carrying body — best of both worlds for high power. You flip it with a simple gate voltage like a MOSFET, but inside it conducts huge current at high voltage with a low, roughly fixed voltage drop, the way a bipolar device does. It thrives from 600 V to several kilovolts.

This makes the IGBT (insulated-gate bipolar transistor) the workhorse of high-voltage, medium-frequency power: motor drives, electric-train traction, solar and wind inverters, induction cooktops. Its weakness is a 'tail current' when turning off, which limits it to tens of kHz — above that, SiC MOSFETs win. Below kilowatt levels and high frequencies, plain MOSFETs are usually better.

Rule of thumb: IGBTs above ~600 V and ~20 kHz, MOSFETs below; SiC blurs the line by handling both high voltage and high frequency.

Also called
insulated-gate bipolar transistor